data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 4v drive nch mosfet rsj650n10 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance.2) high power package. 3) 4v drive. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 1000 rsj650n10 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v continuous i d ? 65 a pulsed i dp ? 130 a continuous i s 65 a pulsed i sp 130 a power dissipation p d 100 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 p w ? 10 ? s, duty cycle ? 1% *2 t c =25c *3 please use within the range of soa. ? thermal resistance symbol limits unit channel to case rth (ch-c) 1.25 ? c / w * t c =25c parameter type source current(body diode) drain current parameter *2 *1 *1 (1) gate(2) drain (3) source lpts 10.1 4.5 13.1 9.0 3.0 0.78 2.54 5.08 1.24 0.4 1.0 1.2 1.3 2.7 (1) (2) (3) ? 1 esd protection diode ? 2 body diode *3*3 * ? 2 ? 1 (1) (2) (3) 1/6 2011.06 - rev.a to-263(d2pak) downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet rsj650n10 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 100 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =100v, v gs =0v gate threshold voltage v gs (th) 1 - 2.5 v v ds =10v, i d =1ma - 6.5 9.1 i d =32.5a, v gs =10v - 7 9.8 i d =32.5a, v gs =4v forward transfer admittance l y fs l4 5 - - sv ds =10v, i d =32.5a input capacitance c iss - 10780 - pf v ds =25v output capacitance c oss - 785 - pf v gs =0v reverse transfer capacitance c rss - 560 - pf f=1mhz turn-on delay time t d(on) - 45 - ns v dd 50v, i d =32.5a rise time t r - 170 - ns v gs =10v turn-off delay time t d(off) - 640 - ns r l =1.54 ? fall time t f - 480 - ns r g =10 ? total gate charge q g - 260 - nc v dd 50v, i d =32.5a gate-source charge q gs - 24 - nc v gs =10v gate-drain charge q gd -6 0-n c *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =65a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-stateresistance r ds (on) ** ** * * * * * ** * * * * * * * 2/6 2011.06 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet rsj650n10 ? electrical characteristic curves (ta=25 ? c) 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain-source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v t a =25 c pulsed 0 10 20 30 40 50 0 2 4 6 8 10 drain current : i d [a] drain-source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v t a =25 c pulsed 1 10 100 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m w ] drain current : i d [a] fig.3 static drain-source on-state resistance vs. drain current v gs =4.0v v gs =10v t a =25 c pulsed 1 10 100 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m w ] drain current : i d [a] fig.4 static drain-source on-state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m w ] drain current : i d [a] fig.5 static drain-source on-state resistance vs. drain current v gs =4v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c v gs =4v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.6 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/6 2011.06 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet rsj650n10 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate-source voltage : v gs [v] fig.7 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : i s [a] source-drain voltage : v sd [v] fig.8 source current vs. source-drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 5 10 15 20 0 2 4 6 8 10 static drain-source on-state resistance r ds(on) [m w ] gate-source voltage : v gs [v] fig.9 static drain-source on-state resistance vs. gate-source voltage i d =32.5a i d =50a t a =25 c pulsed 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.10 switching characteristics t d(on) t r t d(off) t f v dd P 50v v gs =10v r g =10 w t a =25 c pulsed 0 2 4 6 8 10 0 50 100 150 200 250 300 gate-source voltage : v gs [v] total gate charge : q g [nc] fig.11 dynamic input characteristics t a =25 c v dd =50v i d =32.5a pulsed 10 100 1000 10000 100000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain-source voltage : v ds [v] fig.12 typical capacitance vs. drain-source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 4/6 2011.06 - rev.a downloaded from: http:///
rsj650n10 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r (t) pulse width : pw (s) fig.13 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse mounted on epoxy board. (25mm 27mm 0.8mm) rth (ch- a) =70.2 c /w rth (ch- a) (t)=r(t) rth (ch- a) 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 drain current : i d [ a ] drain-source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse mounted on epoxy board. (25mm 27mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 1ms p w = 10ms p w = 1s p w = 300us 5/6 2011.06 - rev.a downloaded from: http:/// www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet rsj650n10 ? measurement circuits v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.06 - rev.a downloaded from: http:///
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes downloaded from: http:///
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